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Микросхема STR-G6653 1 шт./лот

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12-01-2019 в 23:54
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Купить Микросхема STR-G6653 1 шт./лот TO220F-5

OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR

The STR-G6651 is specifically designed to satisfy the requirements

for increased integration and reliability in off-line quasi-resonant flyback

converters. This device incorporates the primary control and drive

circuit with a discrete avalanche-rated power MOSFET.

Cycle-by-cycle current limiting, under-voltage lockout with hysteresis,

over-voltage protection, and thermal shutdown protects the power

supply during the normal overload and fault conditions. Over-voltage

protection and thermal shutdown are latched after a short delay. The

latch may be reset by cycling the input supply. Low-current startup and

a low-power standby mode selected from the secondary circuit completes

a comprehensive suite of features. The device is provided in a five-pin

over-molded TO-220 style package, affording dielectric isolation without

compromising thermal characteristics. Two lead forms are available

(with and without the suffix ‘-LF’) to accommodate printed wiring board

layout or mechanical constraints.

Proven in substantial volumes, the STR-G6651 is a robust low-risk

solution for off-line power supplies particularly where management of

EMI at the source is a significant element of the system design.

FEATURES

_ Quasi-Resonant Operation

_ Output Power to 66 W

_ Low-Loss, Pulse-Ratio-Control Standby Mode

_ Temperature-Compensated Pulse-by-Pulse Over-Current Protection

_ Latched Over-Voltage and Thermal Protection

_ Under-Voltage Lockout with Hysteresis

_ Active Low-Pass Filter for Enhanced Light-Load Stability

_ Switched Attenuation of Leading-Edge Current-Sensing Signal

_ Regulated Soft Gate Drive

_ Adjustable Switching Speed for EMI Control

_ Overmolded Five-Pin Package

ABSOLUTE MAXIMUM RATINGS

at TA = +25°C

Control Supply Voltage, VIN . . . . . . . 35 V

Drain-Source Voltage, VDS . . . . . . . . 650 V

Drain Current, ID

continuous . . . . . . . . . . . . . . . . . . 2.7 A

single-pulse, tw ≤ 1 ms . . . . . . . . 7.2 A

Avalanche Energy, EAS

single-pulse . . . . . . . . . . . . . . . 158 mJ

Over-Current Protection Voltage Range,

VOCP . . . . . . . . . . . . . . . -0.3 V to +6 V

Insulation RMS Voltage,

VWM(RMS) . . . . . . . . . . . . . . . . . . 2000 V

Package Power Dissipation, PD

control (VIN x IIN(ON)) . . . . . . . . . 0.8 W

total . . . . . . . . . . . . . . . . . . . See Graph

FET Channel Temperature, TJ . . . +150°C

Internal Frame Temperature, TF . . +125°C

Operating Temperature Range,

TA . . . . . . . . . . . . . . . -20°C to +125°C

Storage Temperature Range,

TS . . . . . . . . . . . . . . . -40°C to +125°C

Datasheet

Детали объявления

3424

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