128M x 8 Bit NAND Flash Memory
DESCRIPTION
Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective
solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0B′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B is an optimum solution
for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
• Voltage Supply
- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F1G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
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