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ВНИМАНИЕ, ОТКРЫТА ВЕЧНАЯ ПОДПИСКА. СТОИМОСТЬ ПОДПИСКИ - 1000 РУБ. (ПОДРОБНЕЕ О ПОДПИСКЕ)

SST39VF1601-70-4C-EKE TSOP48 Флеш память - Объявления на сайт

SST39VF1601-70-4C-EKE TSOP48 Флеш память

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43,93 руб
Контакт AliExpress
Добавлено 2020-10-20 08:03:52
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Описание

Купить SST39VF1601-70-4C-EKE TSOP48 Флеш память

SST39VF1601, SST39VF3201, SST39VF6401, SST39VF1602, SST39VF3202, SST39VF6402 16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus

Product Description

The SST39VF160x/320x/640x devices are 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x/640x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

Features:

• Organized as 1M x16: SST39VF1601/1602

2M x16: SST39VF3201/3202

4M x16: SST39VF6401/6402

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 μA (typical)

– Auto Low Power Mode: 3 μA (typical)

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord) for SST39VF1602/3202/6402

– Bottom Block-Protection (bottom 32 KWord) for SST39VF1601/3201/6401

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature

– SST: 128 bits; User: 128 bits

• Fast Read Access Time:

– 70 ns

– 90 ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 μs (typical)

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bits

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm) for 16M and 32M

– 48-ball TFBGA (8mm x 10mm) for 64M

Datasheet

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