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ВНИМАНИЕ, ОТКРЫТА ВЕЧНАЯ ПОДПИСКА. СТОИМОСТЬ ПОДПИСКИ - 1000 РУБ. (ПОДРОБНЕЕ О ПОДПИСКЕ)

SST39VF1601-70-4C-EKE TSOP48 Флеш память - Объявления на сайт

SST39VF1601-70-4C-EKE TSOP48 Флеш память

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Добавлено 20-10-2020 в 08:03
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Купить SST39VF1601-70-4C-EKE TSOP48 Флеш память

 

SST39VF1601, SST39VF3201, SST39VF6401, SST39VF1602, SST39VF3202, SST39VF6402 16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus

 

Product Description

 

The SST39VF160x/320x/640x devices are 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x/640x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

 

Features:

 

• Organized as 1M x16: SST39VF1601/1602

 

2M x16: SST39VF3201/3202

 

4M x16: SST39VF6401/6402

 

• Single Voltage Read and Write Operations

 

– 2.7-3.6V

 

• Superior Reliability

 

– Endurance: 100,000 Cycles (Typical)

 

– Greater than 100 years Data Retention

 

• Low Power Consumption (typical values at 5 MHz)

 

– Active Current: 9 mA (typical)

 

– Standby Current: 3 μA (typical)

 

– Auto Low Power Mode: 3 μA (typical)

 

• Hardware Block-Protection/WP# Input Pin

 

– Top Block-Protection (top 32 KWord) for SST39VF1602/3202/6402

 

– Bottom Block-Protection (bottom 32 KWord) for SST39VF1601/3201/6401

 

• Sector-Erase Capability

 

– Uniform 2 KWord sectors

 

• Block-Erase Capability

 

– Uniform 32 KWord blocks

 

• Chip-Erase Capability

 

• Erase-Suspend/Erase-Resume Capabilities

 

• Hardware Reset Pin (RST#)

 

• Security-ID Feature

 

– SST: 128 bits; User: 128 bits

 

• Fast Read Access Time:

 

– 70 ns

 

– 90 ns

 

• Latched Address and Data

 

• Fast Erase and Word-Program:

 

– Sector-Erase Time: 18 ms (typical)

 

– Block-Erase Time: 18 ms (typical)

 

– Chip-Erase Time: 40 ms (typical)

 

– Word-Program Time: 7 μs (typical)

 

• Automatic Write Timing

 

– Internal VPP Generation

 

• End-of-Write Detection

 

– Toggle Bits

 

– Data# Polling

 

• CMOS I/O Compatibility

 

• JEDEC Standard

 

– Flash EEPROM Pinouts and command sets

 

• Packages Available

 

– 48-lead TSOP (12mm x 20mm)

 

– 48-ball TFBGA (6mm x 8mm) for 16M and 32M

 

– 48-ball TFBGA (8mm x 10mm) for 64M

 

Datasheet

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