OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR
The STR-G6651 is specifically designed to satisfy the requirements
for increased integration and reliability in off-line quasi-resonant flyback
converters. This device incorporates the primary control and drive
circuit with a discrete avalanche-rated power MOSFET.
Cycle-by-cycle current limiting, under-voltage lockout with hysteresis,
over-voltage protection, and thermal shutdown protects the power
supply during the normal overload and fault conditions. Over-voltage
protection and thermal shutdown are latched after a short delay. The
latch may be reset by cycling the input supply. Low-current startup and
a low-power standby mode selected from the secondary circuit completes
a comprehensive suite of features. The device is provided in a five-pin
over-molded TO-220 style package, affording dielectric isolation without
compromising thermal characteristics. Two lead forms are available
(with and without the suffix ‘-LF’) to accommodate printed wiring board
layout or mechanical constraints.
Proven in substantial volumes, the STR-G6651 is a robust low-risk
solution for off-line power supplies particularly where management of
EMI at the source is a significant element of the system design.
FEATURES
_ Quasi-Resonant Operation
_ Output Power to 66 W
_ Low-Loss, Pulse-Ratio-Control Standby Mode
_ Temperature-Compensated Pulse-by-Pulse Over-Current Protection
_ Latched Over-Voltage and Thermal Protection
_ Under-Voltage Lockout with Hysteresis
_ Active Low-Pass Filter for Enhanced Light-Load Stability
_ Switched Attenuation of Leading-Edge Current-Sensing Signal
_ Regulated Soft Gate Drive
_ Adjustable Switching Speed for EMI Control
_ Overmolded Five-Pin Package
ABSOLUTE MAXIMUM RATINGS
at TA = +25°C
Control Supply Voltage, VIN . . . . . . . 35 V
Drain-Source Voltage, VDS . . . . . . . . 650 V
Drain Current, ID
continuous . . . . . . . . . . . . . . . . . . 2.7 A
single-pulse, tw ≤ 1 ms . . . . . . . . 7.2 A
Avalanche Energy, EAS
single-pulse . . . . . . . . . . . . . . . 158 mJ
Over-Current Protection Voltage Range,
VOCP . . . . . . . . . . . . . . . -0.3 V to +6 V
Insulation RMS Voltage,
VWM(RMS) . . . . . . . . . . . . . . . . . . 2000 V
Package Power Dissipation, PD
control (VIN x IIN(ON)) . . . . . . . . . 0.8 W
total . . . . . . . . . . . . . . . . . . . See Graph
FET Channel Temperature, TJ . . . +150°C
Internal Frame Temperature, TF . . +125°C
Operating Temperature Range,
TA . . . . . . . . . . . . . . . -20°C to +125°C
Storage Temperature Range,
TS . . . . . . . . . . . . . . . -40°C to +125°C
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