RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
High speed switching: tr = 60 ns typ, tf = 200 ns typ.
Low leak current: ICES = 1 mA max
Isolated package TO-220FL
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