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S29GL128N90TFIR2 флеш память TSOP56

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04-02-2021 в 22:53
76,51 руб
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Описание

 

S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

 

Distinctive Characteristics

 

Architectural Advantages

 

Single power supply operation

 

— 3 volt read, erase, and program operations

 

Enhanced VersatileI/Ocontrol

 

— All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

 

Manufactured on 110 nm MirrorBit process technology

 

Secured Silicon Sector region

 

—128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

 

— May be programmed and locked at the factory or by the customer

 

Flexible sector architecture

 

— S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors

 

— S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors

 

— S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors

 

Compatibility with JEDEC standards

 

— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection

 

100,000 erase cycles per sector typical

 

20-year data retention typical

 

Performance Characteristics

 

High performance

 

—90 ns access time (S29GL128N, S29GL256N)

 

—100ns (S29GL512N)

 

—8-word/16-byte page read buffer

 

—25 ns page read times

 

—16-word/32-byte write buffer reduces overall programming time for multiple-word updates

 

Low power consumption (typical values at 3.0 V, 5 MHz)

 

—25 mA typical active read current;

 

—50 mA typical erase/program current

 

— 1 μA typical standby mode current

 

Package options

 

—56-pin TSOP

 

— 64-ball Fortified BGA

 

Software & Hardware Features

 

Software features

 

—Program Suspend and Resume: read other sectors before programming operation is completed

 

—Erase Suspend and Resume: read/program other sectors before an erase operation is completed

 

—Data# polling and toggle bits provide status

 

—Unlock Bypass Program command reduces overall multiple-word programming time

 

— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

 

Hardware features

 

—Advanced Sector Protection

 

—WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings

 

—Hardware reset input (RESET#) resets device

 

—Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 

Datasheet

Детали объявления

3675

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